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5.0V 2K x 8 Asynchronous Static RAM

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:CDIP
Pkg. Code:CD24
Lead Count (#):24
Pkg. Dimensions (mm):32.0 x 15.24 x 2.9
Pitch (mm):2.54

環境及び輸出分類情報

Pb (Lead) FreeNo
Moisture Sensitivity Level (MSL)1
ECCN (US)3A001.a.2.c
HTS (US)8542.32.0041

製品スペック

Lead Count (#)24
Pb (Lead) FreeNo
Carrier TypeTube
Moisture Sensitivity Level (MSL)1
Access Time (ns)90
ArchitectureAsynchronous
Bus Width (bits)8
Core Voltage (V)5V
Density (Kb)16
I/O Voltage (V)5 - 5
Length (mm)32
MOQ300
Organization2K x 8
Package Area (mm²)487.7
Pb Free Categorye0
Pitch (mm)2.54
Pkg. Dimensions (mm)32.0 x 15.24 x 2.9
Pkg. TypeCDIP
Qty. per Carrier (#)15
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)-55 to 125°C
Thickness (mm)2.9
Width (mm)15.24
掲載No

説明

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.