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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)

特長

  • Directly driven by a 2.5 V power source.
  • Low on-state resistance RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.3 A) RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.3 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)

説明

Support is limited to customers who have already adopted these products.

The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2. 5 V power source.

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