概要
説明
The RTDACHB0000RS‑MS‑1 evaluation kit uses two 110mΩ bi-directional switch (BDS) TOLT devices controlled by a Renesas MCU to provide a flexible platform for demonstrating BDS modulation, operation, and soft‑switching behavior representative of a switching cell in real power‑conversion topologies.
This plug‑and‑play board enables customers to easily observe the switching characteristics of Renesas GaN BDS devices under soft‑switching conditions. By simply connecting the AC input and auxiliary power, users can evaluate BDS functionality and accelerate their converter development.
特長
- Half‑bridge GaN BDS configuration serving as a building block for multiple topologies
- Flexible platform for evaluating GaN BDS modulation and operation
- Multiple drive options for the half bridge
- MCU‑based PWM generation
- Support for user‑supplied PWM signals
- On‑board AC zero‑cross detection
- ZVS soft‑switching operation
アプリケーション
ビデオ&トレーニング
The TP65B110HRU High‑Voltage GaN Bi‑Directional Switch features a ±650V rating with ±800V transient capability, a high 3V gate threshold, and a ±20V gate‑source voltage range. It delivers low reverse‑conduction loss, high dv/dt immunity greater than 100V/ns, and robust 2kV HBM ESD performance. Its compact TOLT package and bi‑directional architecture make it well‑suited for efficient, high‑performance power designs requiring reliable switching in both directions.
ニュース＆ブログ
ニュース 2026年3月23日 |
