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Features

  • Production testing and qualification follow AS6294/1
  • 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver
  • Wide driver bias range of 4.5V to 13.2V
  • Up to 16.5V logic inputs (regardless of VDD level)
    • Inverting and non-inverting inputs
  • Integrated driver optimized for enhancement-mode GaN FETs
    • Internal 4.5V regulated gate drive voltage
  • Full military temperature range operation
    • TA = -55 °C to +125 °C
    • TJ = -55 °C to +150 °C
  • Radiation hardness assurance (lot-by-lot)
    • Low dose rate (0.01rad(Si)/s): 75krad(Si)
  • SEE hardness for Driver (see the SEE test report)
    • No SEB/L LETTH, VDD = 16.5V: 86MeV•cm2/mg
    • No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
  • SEE hardness for GaN FET (see the SEE test report)
    • No SEB/L LETTH, VDS = 100V: 86MeV•cm2/mg

Description

The ISL73033SLHM is a radiation hardened 100V Gallium Nitride (GaN) FET with an integrated low-side GaN FET driver. The GaN FET are capable of providing up to 45A output and have an RDSON as low as 7.5mΩ. The integrated low-side GaN FET driver has a supply range from 4.5V to 13.2V and can accept logic levels up to 14.7V, regardless of the supply voltage. The ISL73033SLHM has a propagation delay of 42ns, enabling high switching frequency for better power conversion efficiency. The ISL73033SLHM is characterized over the full military temperature range from -55 °C to +125 °C and receives screening similar to QMLV devices. The device is offered in an 81-lead Ball Grid Array (BGA) plastic package.

Parameters

Attributes Value
Rating Space
Gate Drive (V) 4.5
VDS (V) 100
RDSON (Typ) (mΩ) 7.5
Input Voltage (Min) (V) 4.5
Input Voltage (Max) (V) 13.2
VIH (V) 1.7
VIL (V) 1.4
Temp. Range (°C) -40 to +125°C
TID LDR (krad(Si)) 75
DSEE (MeV·cm2/mg) 86
Flow RH Plastic
Qualification Level PEMS (RH Plastic)
Die Sale Availability? No
PROTO Availability? Yes

Package Options

Pkg. Type Pkg. Dimensions (mm) Lead Count (#) Pitch (mm)
FBGA 8.0 x 8.0 x 1.36 81 0.8

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