Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | TOLL |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | 10 x 12 |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0095 |
| Pb (Lead) Free |
Product Attributes
| Pkg. Type | TOLL |
| Carrier Type | Tape & Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
| Blocking Capability | Uni-Directional Switch |
| Ciss (Typical) (pF) | 1000 |
| Coss (Typical) (pF) | 110 |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 34 |
| Pkg. Dimensions (mm) | 10 x 12 |
| Qg typ (nC) | 16 |
| Qoss (nC) | 120 |
| Qualification Level | Standard |
| RDSON (Typ) (mΩ) | 50 |
| RDSON (max) (mΩ) | 60 |
| Ron * Qoss (FOM) | 6000 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 650 |
| Vth typ (V) | 4 |
| trr (Typical) (nS) | 50 |
Resources for TP65H050G4QS
Description
The TP65H050G4QS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H050G4QS is offered in an industry-standard TOLL with a Kelvin source and common source package configuration.
