Overview
Description
The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform. It combines a high-voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and enhanced reliability.
Features
- 30mOhm, 650V GaN device in TO-247 package
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Zero reverse recovery charge
- Reduced crossover loss
- Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall reduction in system cost
Comparison
Applications
Documentation
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Type | Title | Date |
Datasheet | PDF 913 KB | |
Manual - Hardware | PDF 2.38 MB | |
Application Note | PDF 380 KB | |
White Paper | PDF 1.92 MB | |
Other | ZIP 283 KB | |
5 items
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Design & Development
Boards & Kits
4.2kW Digital Bridgeless Totem-Pole PFC Evaluation Board
The RTDTTP4200W066A 4.2kW bridgeless totem-pole power factor correction (PFC) evaluation board enables highly efficient single-phase AC/DC conversion using the latest Renesas Gen IV Plus SuperGaN® FET. The TP65H030G4PWS is a diode-free Gallium Nitride (GaN) FET bridge with low reverse recovery...
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

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Videos & Training
The latest generation of high-voltage Gallium Nitride (GaN) FETs offers superior thermal efficiency and ultra-low power loss, enabling high-density power conversion in multi-kilowatt AI datacenters, industrial systems, and charging applications.
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