Overview
Renesas Hi-Rel GaN FET power stages integrate radiation-tolerant (rad-tolerant) GaN FETs with custom space-grade drivers, delivering high-speed, high-efficiency power switching for space applications. By simplifying power stage design, they reduce parasitics, switching losses, and layout complexity, requiring only a digital input for operation. Built to withstand SEE and TID effects, our power stages enable compact, power-dense solutions for DC/DC conversion, motor control, and RF power systems.
Renesas offers products across many screening flows: QML-V, QML-V-equivalent, QML-P, QML-P-equivalent, and RT Plastic. Refer to product datasheets to determine which flows are applicable.
Simplified Power System Design
Pre-integrated power stages reduce layout complexity, allowing system designers to control the power stage with a simple digital input.
Efficiency & Performance
Integrated gate drivers and GaN FETs minimize parasitics and switching losses, delivering higher efficiency and optimized performance.
Designed for Space
Featuring custom space-grade GaN drivers and radiation-tolerant FETs, our power stages are engineered to withstand SEE and TID.
