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4A Output Current, Gate Drive, LSDIP 8, 15mm Creepage Distance Optocoupler

Package Information

CAD Model:View CAD Model
Pkg. Type:LSDIP8
Pkg. Code:
Lead Count (#):8
Pkg. Dimensions (mm):6.7 x 13.8 x 3.95
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
RoHS (RV1S9992ACCSP-10YC#SC0)EnglishJapanese
ECCN (US)
HTS (US)

Product Attributes

Lead Count (#)8
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
Temp. Range (°C)-40 to +125
Country of AssemblyJAPAN
Country of Wafer FabricationJAPAN
Breakdown Voltage (BV) (kV rms)7.5
CMTI min. (kV/µs)100
Channels (#)1
Creepage Distance (mm)15
DC IFLH max. (mA)8
IFLH (Max) (mA)8
IOL/IOH (Peak) (A)4
Isolation Voltage (Vrms)7500
Lead CompliantYes
Length (mm)6.7
MOQ10
Peak Output Current IPK (A)4
Pkg. Dimensions (mm)6.7 x 13.8 x 3.95
Pkg. TypeLSDIP8
Price (USD)$6.4448
SW PDD max. (ns)35
SW PWD max. (ns)35
SW tPLH, tPHL max. (ns)95
Safety Standard UL (UL1577)Approved
Safety Standard VDE (EN IEC 60747-5-5)Approved
Supply Voltage (V)10 - 30
Tape & ReelNo
Target applicationsIGBT,GaN FET,SiC FET and Si power MOSFET gate drive,Industrial inverter / AC Servo,Solar and wind Power Conditioner
Thickness (mm)3.95
UVLOYes
VCC-VEE (Max) (V)35
Width (mm)13.8
tPHL (Max) (μs)0.095
tPLH (Max) (μs)0.095
tf (Typical) (µs)0.01

Description

The RV1S9991A and RV1S9992A are optically coupled isolators containing an AlGaAs LED on the input side and a photodiode with a signal‑processing circuit and power MOSFETs integrated into a single chip on the output side. These devices are designed specifically for high common‑mode transient immunity (CMTI), high‑speed switching, and high‑temperature operation up to TA = 125 °C. They are suitable for driving IGBT, GaN FET, SiC FET, and Si power MOSFET gate drives.