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16Mb Advanced LPSRAM (1M word × 16-bit / 2M word x 8-bit)

Package Information

CAD Model:View CAD Model
Pkg. Type:TSOP(2)
Pkg. Code:pkg_11889
Lead Count (#):52
Pkg. Dimensions (mm):11 x 9 x 1
Pitch (mm):0.4

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
RoHS (RMLV1616AGSD-5S2#AA1)EnglishJapanese
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

Product Attributes

Carrier TypeTray
Moisture Sensitivity Level (MSL)3
Country of AssemblyTAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)55
Density (Kb)16000
Lead CompliantYes
Lead Count (#)52
Length (mm)11
Longevity2032 Dec
MOQ1
Memory Capacity (kbit)16000
Memory Density16
Organization1M x 16
Organization (bit)x 8 / x 16
Organization (kword)2000
Pb (Lead) FreeYes
Pkg. Dimensions (mm)11 x 9 x 1
Pkg. TypeTSOP(2)
Price (USD)$19.03313
RemarksDual Chip Select (CS1#, CS2)
Supply Voltage (V)2.7 - 3.6
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)1
Width (mm)9

Description

The RMLV1616A is a 16-Mbit static RAM organized as 1, 048, 576-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV1616A realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 48-pin TSOP (I), 52-pin µTSOP (II), or 48-ball fine-pitch ball grid array.