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Features

  • Single 3V supply: 2.4V to 3.6V
  • Access time: Power supply voltage from 2.7V to 3.6V: 45ns (max.) Power supply voltage from 2.4V to 2.7V: 55ns (max.)
  • Current consumption: Standby: 0.45µA (typ.)
  • Equal access and cycle times
  • Common data input and output Three state output
  • Directly TTL compatible All inputs and outputs
  • Battery backup operation

Description

The RMLV0816BGSD is a family of 8Mbit static RAMs organized 524,288-word × 16-bit, fabricated by Renesas’ high-performance Advanced LPSRAM technologies. The RMLV0816BGSD realizes higher density, higher performance, and low power consumption. The RMLV0816BGSD offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 52-pin µTSOP (II).

Parameters

AttributesValue
Memory Density8
Organization512K x 16
Access Time (ns)45
Supply Voltage (V)2.4 - 3.6
Temp. Range (°C)-40 to +85

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
TSOP(2)11 x 9 x 1520.4
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Carrier TypeMoisture Sensitivity Level (MSL)Country of AssemblyCountry of Wafer Fabrication
RMLV0816BGSD-4S2#AA1ActiveAvailableOut of StockContactTSOP(2)1ku | $10.95Tray3TAIWANJAPAN
RMLV0816BGSD-4S2#HA1ActiveN/AOut of StockContactTSOP(2)1ku | $10.95Embossed Tape3TAIWANJAPAN
RMLV0816BGSD-4S2#AC0ObsoleteN/AIn StockRoHS:EN
RoHS:JA
TSOP(2)Tray2
RMLV0816BGSD-4S2#HC0ObsoleteN/AIn StockRoHS:EN
RoHS:JA
TSOP(2)Embossed Tape2
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