Skip to main content
Renesas Electronics Corporation - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

Features

  • Single 3V supply: 2.7V to 3.6V
  • Access time: 45ns (max.)
  • Current consumption: Standby: 0.3µA (typ.)
  • Equal access and cycle times
  • Common data input and output: Three-state output
  • Directly TTL compatible: All inputs and outputs
  • Battery backup operation

Description

The RMLV0414E is a 4-Mbit static RAM organized as 262, 144-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV0414E realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 44-pin TSOP (II) package.

Parameters

AttributesValue
Memory Density4
Organization256K x 16
Access Time (ns)45
Supply Voltage (V)2.7 - 3.6
Temp. Range (°C)-40 to +85

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
TSOP(44)18 x 10 x 1.2440.8
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Carrier TypeMoisture Sensitivity Level (MSL)Country of AssemblyCountry of Wafer Fabrication
RMLV0414EGSB-4S2#AA1ActiveAvailableIn StockContactTSOP(2)1ku | $6.32Tray3MALAYSIA, TAIWANJAPAN
RMLV0414EGSB-4S2#HA1ActiveN/AIn StockContactTSOP(2)1ku | $6.32Embossed Tape3MALAYSIA, TAIWANJAPAN
RMLV0414EGSB-4S2#AA0ObsoleteN/AIn StockRoHS:EN
RoHS:JA
TSOP(2)Tray3
RMLV0414EGSB-4S2#HA0ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
TSOP(2)Embossed Tape3
Support Communities

Support Communities

Get quick technical support online from Renesas Engineering Community technical staff.
Browse Articles

Knowledge Base

Browse our knowledge base for helpful articles, FAQs, and other useful resources.
Submit a Ticket

Submit a Ticket

Need to ask a technical question or share confidential information?