Features
- 750V trench & field stop high AE4 technology
- Low collector to emitter saturation voltage VCE(sat) = 1.4V typ. (at IC = 300A, VGE = 15V, Tj = 25 ℃)
- Low switching loss
- Easy paralleling by internal Rg
- AEC Q101 (HTRB, HTGB) qualified
Description
Renesas' AE4 IGBTs for automotive applications use a unique trench gate configuration in their process structure. These devices achieve low saturation voltage without sacrificing robustness and also have low switching loss. This 750V/300A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.
Applications
- Hybrid and electric vehicle inverter
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