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Features

  • Gate emitter voltage: -30V to 30V
  • Saturated collector emitter voltage: 1.55V
  • DC collector current: 150A to 300A
  • Collector emitter voltage 1250V
  • RoHS compliant 

Description

The RJP1CS27DWT is a 1250V, 150A, single switch, insulated-gate bipolar transistor (IGBT) with a gate emitter voltage of -30V to 30V, saturated collector emitter voltage of 1.55V, a 150A to 300A DC collector current, and collector emitter voltage of 1250V.

Applications

  • Inverters
Part NumberStatusSamplesStockRoHSPackagePb (Lead) Free
RJP1CS27DWT-80#X0ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
ChipNo
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