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Description

The RJP1CS26DWT 1250V, 100A, insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications.

Applications

  • Inverters
Part NumberStatusSamplesStockRoHSPackagePb (Lead) Free
RJP1CS26DWT-80#X0ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
ChipNo
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