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Features

  • Optimized for current resonance application
  • Low collector to emitter saturation voltage VCE(sat) = 1.45V typ. (at IC = 50A, VGE = 15V, Ta = 25 °C)
  • Built-in fast recovery diode in one package
  • Trench gate and thin wafer technology

Description

The RJH65T14DPQ-A0 650V, 50A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for induction heating and microwave oven applications. It is available in a TO-247A package type.

Applications

  • Induction heating
  • Microwave ovens
Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) Free
RJH65T14DPQ-A0#T0ObsoleteAvailableIn StockTO-247A3#Tube1Yes
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