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RJH65T14DPQ-A0

Not Recommended for New Designs

IGBT 650V 50A TO-247A Built-In FRD

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Overview

The RJH65T14DPQ-A0 650V, 50A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for induction heating and microwave oven applications. It is available in a TO-247A package type.

  • Optimized for current resonance application
  • Low collector to emitter saturation voltage VCE(sat) = 1.45V typ. (at IC = 50A, VGE = 15V, Ta = 25 °C)
  • Built-in fast recovery diode in one package
  • Trench gate and thin wafer technology

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ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

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