Overview
Description
The RJH65S04DPQ-A0 is a 650V 100A Single Insulated-Gate Bipolar Transistor (IGBT) for inverter applications.
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High-Speed switching tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Ω, Tj = 125°C, inductive load)
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 65 KB | |
| Brochure | PDF 5.41 MB 日本語 | |
| Application Note | PDF 648 KB 日本語 | |
| Application Note | PDF 506 KB 日本語 | |
| Application Note | PDF 941 KB 日本語 | |
| Application Note | PDF 1.05 MB 日本語 | |
| Brochure | PDF 1.32 MB | |
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
Product Options
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