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Features

  • Logic level (4V) driven power MOSFET.
  • Built-in overheat cutoff circuit enables power MOSFET protection in high-temperature conditions
  • Improved resistance to load short circuits
  • The overheat cutoff method is a latch type. After the overheat cutoff circuit operates, it will return to zero bias with the gate voltage
  • Built-in current limiting circuit
  • The power supply voltage is 12V or 24V
  • For industrial use

Description

The RJF0606DPE is a power switch MOSFET that can control ON/OFF between DSs by applying voltage to the gate. The gate of the power MOSFET has a built-in overheat cutoff circuit, which protects against abnormal ambient temperature rises, overpower, and overcurrent. It has the function of protecting the power MOSFET by gate cutoff operation against the heat generated by the MOSFET.

Part NumberStatusSamplesStockRoHSPackageLead Count (#)Carrier TypePb (Lead) Free
RJF0606DPE-00#J3ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
LDPAK(S)-(1)4#Embossed TapeYes
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