Features
- Trench gate and thin wafer technology (G8H series)
- Built-in fast recovery diode in one package
- Low collector to emitter saturation voltage VCE(sat) = 1.5V typ. (at IC = 75A, VGE = 15V, Ta = 25 °C)
- Quality grade: Standard
- High-speed switching
- Non-specification for short circuit
Description
The RBN75H65T1FPQ-A0 650V, 75A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.
Applications
- UPS
- Welding
- Photovoltaic inverters
- Power converter systems
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