Features
- VDSS = 100V
- Standard-level gate drive voltage: VGS(th) = 2.0~4.0V
- Super low on-state resistance: RDS(on) = 2.9mΩ max.
- ID = 160A
- Low input capacitance
- Low thermal resistance
- Package: SO8-FL (5x6)
- 100% Avalanche tested
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBE029N10R1SZN6 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | SO8-FL |
| Simulation Model Available | Yes |
| VDSS (Max) (V) | 100 |
| ID (A) | 160 |
| RDS (ON) (Max) @10V or 8V (mohm) | 2.9 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 2.5 |
| Pch (W) | 165 |
| Vgs (off) (Max) (V) | 4 |
| VGSS (V) | 20 |
| Ciss (Typical) (pF) | 6500 |
| Qg typ (nC) | 91 |
| Mounting Type | Surface Mount |
| Function | Power MOSFETs |
Package Options
| Pkg. Type | Lead Count (#) |
|---|---|
| SO8-FL | 8 |
Application Block Diagrams
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E-Bike System
A complete e-bike system with advanced MCUs, power, and BMS devices extends travel and enhances control.
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Additional Applications
- Motor Control
- Energy Infrastructure
- Industrial Automation
- DC/DC Power Conversion
- Power Tools
- Robotics