Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | TOLL |
| Pkg. Code: | |
| Lead Count (#): | 8 |
| Pkg. Dimensions (mm): | 9.90 x 11.68 x 2.30 |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 1 |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0095 |
| RoHS (RBA300N10EANS-3UA02#GB0) | EnglishJapanese |
| Pb (Lead) Free | Yes |
Product Attributes
| Pkg. Type | TOLL |
| Standard Pkg. Type | TOLL |
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 1 |
| Country of Assembly | CHINA, JAPAN |
| Country of Wafer Fabrication | JAPAN |
| Application | Automotive, Industrial Use |
| Automotive Qual. | Yes |
| Channels (#) | 1 |
| Ciss (Typical) (pF) | 13000 |
| Function | Power MOSFETs |
| Gate Level | Standard |
| ID (A) | 340 |
| Id max @ 25°C (A) | 340 |
| Lead Compliant | No |
| Lead Count (#) | 8 |
| Length (mm) | 11.68 |
| MOQ | 2000 |
| Mounting Type | Surface Mount |
| Nch/Pch | Nch |
| Pb (Lead) Free | Yes |
| Pch (W) | 468 |
| Pkg. Dimensions (mm) | 9.90 x 11.68 x 2.30 |
| Price (USD) | $2.36692 |
| Qg typ (nC) | 170 |
| Qualification Level | Automotive |
| RDS (ON) (Max) @10V (mohm) | 1.5 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 1.3 |
| Series Name | REXFET-1 |
| Simulation Model Available | Yes |
| Tape & Reel | Yes |
| Target applications | Small Traction, 48V load, OBC, Charging station, LDC, Energy infrastructure, Micro inverter, Power-tool, DC-DC, etc. |
| Thickness (mm) | 2.5 |
| VDSS (Max) (V) | 100 |
| VGSS (V) | 20 |
| Vgs (off) (Max) (V) | 4 |
| Width (mm) | 9.9 |
Resources for RBA300N10EANS-3UA02
Description
The RBA300N10EANS-3UA02 n‑channel power MOSFET features REXFET-1 split-gate technology and is available in a TOLL package. The TOLL package features compact, leadless designs with wettable flanks to support enhanced thermal performance, reliability, and ease of assembly.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and high switching performance, making it ideal for high-power and high-frequency applications.
