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150V, 190A, 3.9mΩ N‑Channel Automotive REXFET‑1 Power MOSFET in TOLL Package

Package Information

CAD Model:View CAD Model
Pkg. Type:TOLL
Pkg. Code:
Lead Count (#):8
Pkg. Dimensions (mm):9.90 x 11.68 x 2.30
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ECCN (US)
HTS (US)8541.29.0095
RoHS (RBA190N15YANS-3UA04#GB0)EnglishJapanese

Product Attributes

Pkg. TypeTOLL
Lead Count (#)8
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
Channels (#)1
Ciss (Typical) (pF)5500
Country of AssemblyCHINA
Country of Wafer FabricationCHINA
FunctionPower MOSFETs
Gate LevelStandard
ID (A)190
Id max @ 25°C (A)190
Lead CompliantNo
Length (mm)11.68
MOQ2000
Mounting TypeSurface Mount
Nch/PchNch
Pch (W)319
Pkg. Dimensions (mm)9.90 x 11.68 x 2.30
Qg typ (nC)76
Qualification LevelAutomotive
RDS (ON) (Max) @10V (mohm)3.9
RDS (ON) (Typical) @ 10V / 8V (mohm)3.2
Series NameREXFET-1
Simulation Model AvailableYes
Standard Pkg. TypeTOLL
Tape & ReelYes
Thickness (mm)2.3
VDSS (Max) (V)150
VGSS (V)20
Vgs (off) (Max) (V)3.7
Width (mm)9.9

Description

The RBA190N15YANS-3UA04 n‑channel power MOSFET features REXFET-1 split-gate technology and is available in a TOLL package. The TOLL package features compact, leadless designs with wettable flanks to support enhanced thermal performance, reliability, and ease of assembly.

Renesas' REXFET‑1 split‑gate technology is well‑suited for applications that require low RDS(on) and high switching performance, making it ideal for high‑power and high‑frequency applications.