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Renesas Electronics Corporation

Features

  • Standard-level gate drive voltage: VGS(th) = 2.0V to 4.0V
  • Super low on-state resistance: RDS(on) = 2.3mΩ max.
  • Low input capacitance
  • Designed for automotive applications and AEC-Q101 qualified

Description

The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for automotive applications such as power management systems, motor control, and DC/DC converters.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeSO8-FL 5x6 BSC
Gate LevelStandard
VDSS (Max) (V)40
ID (A)100
RDS (ON) (Max) @10V (mohm)2.3
Pch (W)88
Ciss (Typical) (pF)3200
Qg typ (nC)60
Series NameANL4

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
SO8-FL5.15 x 6.10 x 1.008

Application Block Diagrams

Fail-safe Electro-Mechanical Braking (EMB) block diagram showing an ASIL-ready wheel end actuator with redundant power and communication interfaces, integrated motor control, and fail-safe brake actuation.
Electro-Mechanical Braking (EMB) Fail-Safe System
ASIL-ready EMB wheel end actuator featuring fail-safe operation, redundant interfaces, and integrated motor control.

Additional Applications

  • 12V Load Electric Power Steering (EPS)
  • Anti-lock Braking System (ABS)
  • Power Management System (PMS)
  • Battery Management System (BMS)
  • Electronic Fuse (E-fuse)

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