Features
- VDSS = 100V
- Standard-level gate drive voltage: VGS(th) = 2.0V to 4.0V
- Super low on-state resistance: RDS(on) = 1.5mΩ max.
- ID(DC) = 340A
- Low input capacitance
- Low thermal resistance
- 100% Avalanche tested
- AEC-Q101 qualified
- Production Part Approval Process (PPAP) capable
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBA015N10R1SBPW n-channel power MOSFET features REXFET‑1 split‑gate technology and is available in a TOLT package. The TOLT package uses gullwing‑type leads to provide strong resistance to thermal stress and incorporates a top‑side cooling structure that enhances system‑level heat dissipation.
Renesas’ REXFET‑1 split‑gate technology is well-suited for applications requiring low RDS(on) and high switching performance, making it ideal for high‑power and high‑frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TOLT |
| Gate Level | Standard |
| VDSS (Max) (V) | 100 |
| ID (A) | 340 |
| RDS (ON) (Max) @10V (mohm) | 1.5 |
| Pch (W) | 468 |
| Ciss (Typical) (pF) | 13000 |
| Qg typ (nC) | 170 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| TOLT | 15 x 9.9 x 2.3 | 16 |
Applications
- 48V Battery System and Motor Drive
- Small Traction (2-Wheel, 3-Wheel Vehicle)
- Onboard Charger (OBC)
- Charging Station
- Low Voltage DC/DC