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Features

  • Single 2.7V ~ 3.6V power supply
  • Small stand-by current: 1µA (3.0V, typical)
  • No clocks, No refresh
  • All inputs and outputs are TTL compatible.
  • Easy memory expansion by CS1# and CS2
  • Common Data I/O
  • Three-state outputs: OR-tie capability
  • OE# prevents data contention on the I/O bus

Description

The R1LV0208BSA is a low-voltage, 2-Mbit static RAM organized as 262, 144-word by 8-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LV0208BSA realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. The R1LV0208BSA is packaged in a 32-pin sTSOP.

Parameters

AttributesValue
Memory Density2
Organization256K x 8
Access Time (ns)55
Supply Voltage (V)2.7 - 3.6
Temp. Range (°C)-40 to +85

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
sTSOP(32)12 x 8 x 1.2320.5
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Carrier TypeMoisture Sensitivity Level (MSL)Country of AssemblyCountry of Wafer Fabrication
R1LV0208BSA-5SI#B1ActiveAvailableIn StockContactTSOP(1)1ku | $4.2Tray3MALAYSIA, TAIWANJAPAN
R1LV0208BSA-5SI#S1ActiveN/AIn StockContactTSOP(1)1ku | $4.2Embossed Tape3MALAYSIA, TAIWANJAPAN
R1LV0208BSA-5SI#B0ObsoleteN/AIn StockRoHS:EN
RoHS:JA
TSOP(1)Tray2
R1LV0208BSA-5SI#BXObsoleteN/AOut of StockRoHS:EN
RoHS:JA
TSOP(1)Tray3
R1LV0208BSA-5SI#S0ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
TSOP(1)Embossed Tape2
R1LV0208BSA-5SI#SXObsoleteN/AOut of StockRoHS:EN
RoHS:JA
TSOP(1)Embossed Tape3