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Renesas Electronics Corporation
1Mb Advanced LPSRAM (128k word x 8bit)

Package Information

CAD Model:View CAD Model
Pkg. Type:sTSOP(32)
Pkg. Code:pkg_11617
Lead Count (#):32
Pkg. Dimensions (mm):12 x 8 x 1.2
Pitch (mm):0.5

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
ECCN (US)EAR99
HTS (US)8542.32.0041
Pb (Lead) FreeYes

Product Attributes

Carrier TypeTray
Moisture Sensitivity Level (MSL)3
Country of AssemblyMALAYSIA, TAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)55
Density (Kb)1000
Lead CompliantYes
Lead Count (#)32
Length (mm)12
MOQ1
Memory Capacity (kbit)1000
Memory Density1
Organization128K x 8
Organization (bit)x 8
Organization (kword)128
Pb (Lead) FreeYes
Pkg. Dimensions (mm)12 x 8 x 1.2
Pkg. TypesTSOP(32)
Price (USD)$2.68172
RemarksDual Chip Select (CS1#, CS2)
Replacement Remarkconsolidation of part-names and/or assembly material change
Supply Voltage (V)4.5 - 5.5
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)1.2
Width (mm)8

Description

The R1LP0108E is a low-voltage 1-Mbit static RAM organized as 131, 072-word by 8-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LP0108E realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. It has been packaged in a 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.