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Features

  • High collector to emitter voltage (VCEO = 350 V)
  • High isolation voltage (BV = 5 000 Vr.m.s.)
  • High current transfer ratio (CTR = 1 500 % TYP.)
  • Ordering number of taping product: PS2535L-1-F3: 2 000 pcs/reel
  • Safety standards UL approved: No. E72422 BSI approved: No. 8221/8222 DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option)

Description

The PS2535-1 and PS2535L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. A high withstanding voltage between the I/O, the high voltage between the collector and emitter of the transistor, and darlington transistor output enables low-current input. The PS2535-1 is in a plastic DIP (Dual In-line Package) and the PS2535L-1 is lead bending type (Gull-wing) for surface mount.

Parameters

AttributesValue
Channels (#)1
VCEO max (mA)350
IC max (mA)120
Isolation Voltage (Vrms)5000
CTR (min)%400
CTR (Max)%5500
IF at CTR (mA)1
VCE at CTR (V)2
SW tr Typ. (µs)18
SW tf Typ. (µs)5
Creepage Distance (mm)7
Safety Standard UL (UL1577)Approved
Safety Standard VDE (EN IEC 60747-5-5)Approved
Safety Standard BSI (BS EN IEC 62368-1)Approved
Part NumberStatusSamplesLongevityStockPackageBudgetary Price (USD)Moisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
PS2535-1-AActiveAvailable2031 DecIn StockPackage1ku | $0.4751YesJAPANJAPAN
PS2535-1-V-AActiveAvailable2031 DecIn StockPackage1ku | $0.4751YesJAPANJAPAN
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