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NP110N04PDG

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Power MOSFETs for Automotive

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NP110N04PDG Data Sheet

Overview

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The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Channel temperature 175 degree rating
  • Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A)

Documentation

Featured Documentation
Type Title Date
Datasheet
NP110N04PDG Data Sheet
PDF 244 KB
Guide
Power Discrete Mount Pad
PDF 796 KB
Product Reliability Report
NP-Series USMO4Nch-MP25 Reliability Report
PDF 227 KB
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Brochure
Power MOSFET & IPD
PDF 2.24 MB
5 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

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Diagram of ECAD Models

Models
Type Title Date
Model - SPICE
NP110N04PDG SPICE Data
ZIP 1 KB
1 item

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