Skip to main content
Renesas Electronics Corporation - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

Features

  • Logic level
  • Built-in gate protection diode
  • Super low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 12.5 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
  • High current rating ID(DC) = ±90 A
  • Low input capacitance Ciss = 4600 pF TYP.
  • Designed for automotive application and AEC-Q101 qualified

Description

Support is limited to customers who have already adopted these products.

The NP90N06VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTO-263 / D2PAK
Gate LevelLogic
VDSS (Max) (V)60
ID (A)90
RDS (ON) (Max) @10V (mohm)7.8
RDS (ON) (Max) @4.5V (mohm)12.5
Pch (W)105
Ciss (Typical) (pF)4600
Qg typ (nC)90
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-3ZP6 x 6 x 2.653
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP90N06VLG-E1-AYActiveN/AOut of StockContactMP-3ZP1ku | $0.8813#Embossed Tape1YesMALAYSIAJAPAN
NP90N06VLG-E2-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-3ZP3#Embossed Tape1Yes
Support Communities

Support Communities

Get quick technical support online from Renesas Engineering Community technical staff.
Browse Articles

Knowledge Base

Browse our knowledge base for helpful articles, FAQs, and other useful resources.
Submit a Ticket

Submit a Ticket

Need to ask a technical question or share confidential information?