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Features

  • Channel temperature 175 degree rated
  • Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
  • Low input capacitance Ciss = 7600 pF TYP.
  • Built-in gate protection diode

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

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