Skip to main content
Renesas Electronics Corporation - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

Features

  • Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
  • Low Ciss Ciss = 5700 pF TYP.

Description

Support is limited to customers who have already adopted these products.

The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Part NumberStatusSamplesStockRoHSPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) Free
NP82N06PDG-E1-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-25ZP3#Embossed Tape1Yes
NP82N06PDG-E2-AYNRNDN/AOut of StockContactMP-25ZP3#Embossed Tape1Yes
Support Communities

Support Communities

Get quick technical support online from Renesas Engineering Community technical staff.
Browse Articles

Knowledge Base

Browse our knowledge base for helpful articles, FAQs, and other useful resources.
Submit a Ticket

Submit a Ticket

Need to ask a technical question or share confidential information?