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Features

  • Logic level
  • Built-in gate protection diode
  • Super low on-state resistance NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) NP80N06PLG RDS(on)1 = 8.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
  • High current rating ID(DC) = ±80 A
  • Low input capacitance Ciss = 4600 pF TYP.
  • Designed for automotive application and AEC-Q101 qualified

Description

Support is limited to customers who have already adopted these products.

The NP80N06MLG, NP80N06NLG, and NP80N06PLG are N-channel MOS Field Effect Transistors designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTO-263 / D2PAK
Gate LevelLogic
VDSS (Max) (V)60
ID (A)80
RDS (ON) (Max) @10V (mohm)8.3
RDS (ON) (Max) @4.5V (mohm)13
Pch (W)115
Ciss (Typical) (pF)4600
Qg typ (nC)85
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-25ZP10 x 9 x 4.93
Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) Free
NP80N06PLG-E1B-AYActiveAvailableOut of StockMP-25ZP3#Embossed Tape1Yes
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