Features
- Logic level
- Built-in gate protection diode
- Super low on-state resistance NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) NP80N06PLG RDS(on)1 = 8.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- High current rating ID(DC) = ±80 A
- Low input capacitance Ciss = 4600 pF TYP.
- Designed for automotive application and AEC-Q101 qualified
Description
Support is limited to customers who have already adopted these products.
The NP80N06MLG, NP80N06NLG, and NP80N06PLG are N-channel MOS Field Effect Transistors designed for high current switching applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-263 / D2PAK |
| Gate Level | Logic |
| VDSS (Max) (V) | 60 |
| ID (A) | 80 |
| RDS (ON) (Max) @10V (mohm) | 8.3 |
| RDS (ON) (Max) @4.5V (mohm) | 13 |
| Pch (W) | 115 |
| Ciss (Typical) (pF) | 4600 |
| Qg typ (nC) | 85 |
| Series Name | NP Series |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-25ZP | 10 x 9 x 4.9 | 3 |
Applied Filters: