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Features

  • Super low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
  • Low input capacitance Ciss = 5000 pF TYP.

Description

The NP50P04SDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchPch
Channels (#)1
Standard Pkg. TypeTO-252 / DPAK
Gate LevelLogic
VDSS (Max) (V)-40
ID (A)-50
RDS (ON) (Max) @10V (mohm)9.6
RDS (ON) (Max) @4.5V (mohm)15
Pch (W)84
Ciss (Typical) (pF)5000
Qg typ (nC)100
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-3ZK6 x 6 x 2.653
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP50P04SDG-E1-AYActiveAvailableIn StockContactMP-3ZK1ku | $0.8473#Embossed Tape1YesMALAYSIAJAPAN
NP50P04SDG-E2-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-3ZK3#Embossed Tape1Yes

Knowledge Base

  1. How to carry out PWM control of a solenoid using the NP50P04SDG?

    It also depends on the PWM frequency, but since the NP50P04SDG has large input capacitance (Ciss Typ 5000 pF), if pull-up resistance and gate series resistance are high the time constant will also be large. This is probably what is slowing down the rise of the gate to source ...

    Sep 2, 2013
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