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Features

  • Low on-state resistance RDS(on) = 47 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 mΩ MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 mΩ MAX. (VGS = –4.5 V, ID = –10 A)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

Description

The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchPch
Channels (#)1
Standard Pkg. TypeSO8-FL 5x6 BSC
Gate LevelLogic
VDSS (Max) (V)-60
ID (A)-20
RDS (ON) (Max) @10V (mohm)47
RDS (ON) (Max) @4.5V (mohm)70
Pch (W)57
Ciss (Typical) (pF)1605
Qg typ (nC)34
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
HSON5 x 5 x 1.458
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP20P06YLG-E1-AYActiveAvailableIn StockContactHSON1ku | $0.5318#Embossed Tape1YesJAPAN, MALAYSIAJAPAN
NP20P06YLG-E2-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
HSON8#Embossed Tape1Yes
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