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Features

  • Super low on-state resistance RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 64 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
  • Low input capacitance Ciss = 1650 pF TYP.
  • Built-in gate protection diode

Description

The NP20P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchPch
Channels (#)1
Standard Pkg. TypeTO-252 / DPAK
Gate LevelLogic
VDSS (Max) (V)-60
ID (A)-20
RDS (ON) (Max) @10V (mohm)48
RDS (ON) (Max) @4.5V (mohm)64
Pch (W)38
Ciss (Typical) (pF)1650
Qg typ (nC)34
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-3ZK6 x 6 x 2.653

Application Block Diagrams

Zone-ECU Virtualization Solution Platform Block Diagram
Zone-ECU Virtualization Solution Platform
Zone-ECU virtualization platform integrates virtual ECUs on one physical unit, reducing costs and enabling secure designs.

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Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP20P06SLG-E1-AYActiveAvailableIn StockContactMP-3ZK1ku | $0.563#Embossed Tape1YesMALAYSIAJAPAN
NP20P06SLG-E2-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-3ZK3#Embossed Tape1Yes

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