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Features

  • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A)
  • High current rating ID(DC) = ±110 A

Description

Support is limited to customers who have already adopted these products.

The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTO-263 / D2PAK
Gate LevelStandard
VDSS (Max) (V)40
ID (A)110
RDS (ON) (Max) @10V (mohm)2.3
Pch (W)220
Ciss (Typical) (pF)10500
Qg typ (nC)180
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-25ZP10 x 9 x 4.93
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP109N04PUG-E1-AYActiveN/AIn StockContactMP-25ZP1ku | $1.7263#Embossed Tape1YesMALAYSIAJAPAN
NP109N04PUG-E2-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-25ZP3#Embossed Tape1Yes
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