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Features

  • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
  • High current rating: ID(DC) = ∓100 A
  • Built-in gate protection diode

Description

The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchPch
Channels (#)1
Standard Pkg. TypeTO-263 / D2PAK
Gate LevelLogic
VDSS (Max) (V)-60
ID (A)-100
RDS (ON) (Max) @10V (mohm)6
RDS (ON) (Max) @4.5V (mohm)7.8
Pch (W)200
Ciss (Typical) (pF)15000
Qg typ (nC)300
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-25ZP10 x 9 x 4.93
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP100P06PLG-E1-AYActiveAvailableIn StockContactMP-25ZP1ku | $2.1733#Embossed Tape1YesMALAYSIAJAPAN
NP100P06PLG-E2-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-25ZP3#Embossed Tape1Yes
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