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Features

  • Low on-state resistance
    RDS(on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A)
  • Low input capacitance
    Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
  • High current
    ID(DC) = ±100 A
  • RoHS Compliant

Description

The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelIndustrial
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTO-262 / I2PAK
Gate LevelStandard
VDSS (Max) (V)60
ID (A)100
RDS (ON) (Max) @10V (mohm)4.6
Pch (W)156
Ciss (Typical) (pF)7730
Qg typ (nC)133
Series NameN0 Series

Package Options

Pkg. TypeLead Count (#)
TO-2623
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypePb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
N0603N-S23-AYActiveAvailableIn StockRoHS:EN
RoHS:JA
TO-2621ku | $1.1333#TubeYesCHINA, KOREAJAPAN
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