Features
- Less than 0.15in2 footprint for the complete 1A converter
- Components on one side of PCB
- Max height 1.1mm MSOP10
- 100ms Power-On-Reset output (POR)
- Internally-compensated voltage mode controller
- Up to 95% efficiency
- <1µA shutdown current
- 500µA quiescent current
- Hiccup mode overcurrent and over-temperature protection
- Pb-free (RoHS compliant)
ISL97536 Functional Diagram
Description
The ISL97536 is a synchronous, integrated FET 1A step-down regulator with internal compensation. It operates with an input voltage range from 2. 5V to 6V, which accommodates supplies of 3. 3V, 5V, or a Li-ion battery source. The output can be externally set from 0. 8V to VIN with a resistive divider. The ISL97536 features PWM control with a 1. 4MHz typical switching frequency. The typical no load quiescent current is only 500µA. Additional features include a 100ms Power-On- Reset output, 1µA shutdown current, short-circuit protection, and over-temperature protection. The ISL97536 is available in the 10 Ld MSOP package, making the entire converter occupy less than 0. 15in2 of PCB area with components on one side only. The 10 Ld MSOP package is specified for operation over the full -40°C to +85°C temperature range.
Application Block Diagrams
 | Power Sequencer & I/O Expander for Printers (PPC/MFP) An MCU-based power sequencer and I/O expander for high-performance PPC/MFP printers. |
Additional Applications
- PDA and pocket PC computers
- Bar code readers
- Cellular phones
- Portable test equipment
- Li-ion battery powered devices
- Small form factor (SFP) modules
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL97536IUZ | Obsolete | N/A | Out of Stock | RoHS:EN | MSOP | 10# | Tube | 2 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL97536IUZ-T | Obsolete | N/A | Out of Stock | RoHS:EN | MSOP | 10# | Reel | 2 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL97536IUZ-TK | Obsolete | N/A | Out of Stock | RoHS:EN | MSOP | 10# | Reel | 2 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
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- Application NotePDF 592 KB an9208 Feb 01, 2018AI-generated Summary: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 650 KB an9210 Dec 21, 2001AI-generated Summary: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- Application NotePDF 387 KB an9209 Aug 13, 1998AI-generated Summary: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.
- Application NotePDF 349 KB an7244 Aug 12, 1998AI-generated Summary: Power MOSFETs feature a positive temperature coefficient of resistance, enhancing stability and preventing thermal runaway by increasing resistance as temperature rises. Their gate terminals have extremely high input impedance with minimal leakage current, dominated by capacitive characteristics. Switching speed depends on gate resistance and capacitance, with polysilicon gates offering higher resistance and lower frequency operation than metal gates. MOSFETs require a gate-to-source voltage exceeding a threshold (around 2V) and typically about 10V to fully saturate and deliver maximum drain current. TTL and CMOS drivers differ in voltage capability and switching speed, often requiring buffering for optimal performance.
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- Application NotePDF 592 KB an9208 Feb 01, 2018AI-generated Summary: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 650 KB an9210 Dec 21, 2001AI-generated Summary: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- Application NotePDF 387 KB an9209 Aug 13, 1998AI-generated Summary: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.View More (6)
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