Features
- Up to 2A Continuous Output Current
- Integrated MOSFETs for Small Regulator Footprint
- Adjustable Switching Frequency, 500kHz to 1.2MHz
- Tight Output Voltage Regulation, ±1% Over-Temperature
- Wide Input Voltage Range, 5V ±10% or 5.5V to 14V
- Wide Output Voltage Range, from 0.6V
- Simple Single-Loop Voltage-Mode PWM Control Design
- Input Voltage Feed-Forward for Constant Modulator Gain
- Fast PWM Converter Transient Response
- Lossless rDS(ON) High Side and Low Side Overcurrent Protection
- Undervoltage Detection
- Integrated Thermal Shutdown Protection
- Power-Good Indication
- Adjustable Soft-Start
- Start-Up with Pre-Bias Output
- Pb-free (RoHS Compliant)
ISL8502 Functional Diagram
Description
The ISL8502 is a synchronous buck controller with internal MOSFETs packaged in a small 4mm x 4mm QFN package. The ISL8502 can support a continuous load of 2A and has a very wide input voltage range. With the switching MOSFETs integrated into the IC, the complete regulator footprint can be very small and provide a much more efficient solution than a linear regulator. The ISL8502 is capable of stand alone operation or it can be used in a master slave combination for multiple outputs that are derived from the same input rail. Multiple slave channels (up to six) can be synchronized. This method minimizes the EMI and beat frequencies effect with multi-channel operation. The switching PWM controller drives two internal N-Channel MOSFETs in a synchronous-rectified buck converter topology. The synchronous buck converter uses voltage-mode control with fast transient response. The switching regulator provides a maximum static regulation tolerance of ±1% over line, load, and temperature ranges. The output is user-adjustable by means of external resistors down to 0.6V. The output is monitored for undervoltage events. The switching regulator also has overcurrent protection. Thermal shutdown is integrated. The ISL8502 features a bidirectional Enable pin that allows the part to pull the enable pin low during fault detection.
Applications
- Point of Load Applications
- Graphics Cards - GPU and Memory Supplies
- ASIC Power Supplies
- Embedded Processor and I/O supplies
- DSP Supplies
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL8502IRZ | Obsolete | N/A | In Stock | RoHS:EN | QFN | 24# | Tube | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL8502IRZ-T | Obsolete | N/A | In Stock | RoHS:EN | QFN | 24# | Reel | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
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- Application NotePDF 592 KB an9208 Feb 01, 2018AI-generated Summary: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- Product Change NoticePDF 398 KB PCN15046 Jan 07, 2016
- Product Change NoticePDF 248 KB PCN10055 Jun 30, 2010
- Product Change NoticePDF 72 KB PCN10067 Jun 22, 2010
- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 650 KB an9210 Dec 21, 2001AI-generated Summary: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- Application NotePDF 387 KB an9209 Aug 13, 1998AI-generated Summary: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.
- Application NotePDF 349 KB an7244 Aug 12, 1998AI-generated Summary: Power MOSFETs feature a positive temperature coefficient of resistance, enhancing stability and preventing thermal runaway by increasing resistance as temperature rises. Their gate terminals have extremely high input impedance with minimal leakage current, dominated by capacitive characteristics. Switching speed depends on gate resistance and capacitance, with polysilicon gates offering higher resistance and lower frequency operation than metal gates. MOSFETs require a gate-to-source voltage exceeding a threshold (around 2V) and typically about 10V to fully saturate and deliver maximum drain current. TTL and CMOS drivers differ in voltage capability and switching speed, often requiring buffering for optimal performance.
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- Application NotePDF 592 KB an9208 Feb 01, 2018AI-generated Summary: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 650 KB an9210 Dec 21, 2001AI-generated Summary: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- Application NotePDF 387 KB an9209 Aug 13, 1998AI-generated Summary: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.View More (6)
Application Notes & White Papers (6)
- Product Change NoticePDF 398 KB PCN15046 Jan 07, 2016
- Product Change NoticePDF 248 KB PCN10055 Jun 30, 2010
- Product Change NoticePDF 72 KB PCN10067 Jun 22, 2010
Product Notices (PCN, EOL, etc) (4)
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