Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | PFL |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | |
| Pb (Lead) Free | No |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.49.7040 |
Product Attributes
| Pkg. Type | PFL |
| Qualification Level | EM |
| Pb (Lead) Free | No |
| MOQ | 5 |
| Temp. Range (°C) | -55 to +125°C |
| CAGE code | 34371 |
| DSEE (MeV·cm2/mg) | 86 |
| Die Sale Availability? | Yes |
| Flow | RH Hermetic |
| IDS (A) | 7.5 |
| Models Available | SPICE |
| PROTO Availability? | Yes |
| Qg typ (nC) | 14 |
| RDSON (Typ) (mΩ) | 45 |
| Rating | Space |
| TID LDR (krad(Si)) | 75 |
| Thermal Resistance θJC (°C/W) | 18.7 |
| VDS (V) | 200 |
| VGS (Max) (V) | 6 |
| VGS(TH) (Max) (V) | 2.5 |
Resources for ISL73024SEH
Description
The ISL73024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single-Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allow for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near-zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By Combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535-like flow results in best-in-class power transistors that are ideally suited for high-reliability applications.
