Overview
Description
The ISL70020SEH is a 40V N-channel enhancement mode GaN power transistor. This GaN FET has been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
Features
- Very low rDS(ON) 3.5mΩ (typical)
- Ultra low total gate charge 19nC (typical)
- Radiation acceptance testing
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s): 75krad(Si)
- SEE hardness (see the SEE report for details)
- SEL/SEB LETTH (VDS = 40V, VGS = 0V): 86.4MeV•cm2/mg
- Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
- Package area: 42mm2
- Full military-temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 516 KB | |
| Report | PDF 524 KB | |
| Technical Brief | PDF 332 KB | |
| Manual - Development Tools | PDF 1.06 MB | |
| Application Note | PDF 221 KB | |
| Report | PDF 341 KB | |
| White Paper | PDF 470 KB 日本語 | |
| White Paper | PDF 548 KB | |
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Design & Development
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Boards & Kits
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
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FAQs
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ISL70020SEH / ISL73020SEH Thermal Resistance Junction to Case Top
The Theta-jc (to the package top) is 14C/W.
Sep 18, 2024 -
Rad Hard GaN FETs Source and Substrate Connection
You should connect the substrate and source terminals together using a single copper land pattern. The PCB provides a lower impedance connection to augment the internal connection. Holding the source and substrate together is crucial in high-speed switching applications.
Jul 3, 2025