Features
- Dual MOSFET drives for synchronous rectified bridge
- Adaptive shoot-through protection
- 0.5Ω On-resistance and 4A sink current capability
- Supports high switching frequency up to 2MHz
- Fast output rise and fall time
- Low propagation delay
- Three-state PWM input for power stage shutdown
- Internal bootstrap Schottky diode
- Low bias supply current (5V, 80µA)
- Diode emulation for enhanced light load efficiency and pre-biased start-up applications
- VCC POR (Power-On-Reset) feature integrated
- Low three-state shutdown holdoff time (typical 160ns)
- Pin-to-pin compatible with ISL6207
- QFN and DFN package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad flat no leads - package outline DFN - Dual flat no leads - package outline
- Near chip scale package footprint, which improves PCB efficiency and has a thinner profile
- Pb-free (RoHS Compliant)
Description
The ISL6208 and ISL6208B are high frequency, dual MOSFET drivers, optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. They are especially suited for mobile computing applications that require high efficiency and excellent thermal performance. These drivers, combined with an Intersil multiphase Buck PWM controller, form a complete single-stage core-voltage regulator solution for advanced mobile microprocessors. ISL6208 and ISL6208B have the same function but different packages. The descriptions in this datasheet are based on ISL6208 and also apply to ISL6208B. The ISL6208 features 4A typical sinking current for the lower gate driver. This current is capable of holding the lower MOSFET gate off during the rising edge of the Phase node. This prevents shoot-through power loss caused by the high dv/dt of phase voltages. The operating voltage matches the 30V breakdown voltage of the MOSFETs commonly used in mobile computer power supplies. The ISL6208 also features a three-state PWM input that, working together with Intersil’s multiphase PWM controllers, will prevent negative voltage output during CPU shutdown. This feature eliminates a protective Schottky diode usually seen in a microprocessor power systems. MOSFET gates can be efficiently switched up to 2MHz using the ISL6208. Each driver is capable of driving a 3000pF load with propagation delays of 8ns and transition times under 10ns. Bootstrapping is implemented with an internal Schottky diode. This reduces system cost and complexity, while allowing the use of higher performance MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. A diode emulation feature is integrated in the ISL6208 to enhance converter efficiency at light load conditions. This feature also allows for monotonic start-up into pre-biased outputs. When diode emulation is enabled, the driver will allow discontinuous conduction mode by detecting when the inductor current reaches zero and subsequently turning off the low side MOSFET gate.
Applications
- Core voltage supplies for Intel® and AMD® mobile
- microprocessors
- High frequency low profile DC/DC converters
- High current low output voltage DC/DC converters
- High input voltage DC/DC converters
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL6208CBZ | Obsolete | N/A | In Stock | RoHS:EN | SOICN | 8# | Tube | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6208CBZ-T | Obsolete | N/A | In Stock | RoHS:EN | SOICN | 8# | Reel | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6208CRZ | Obsolete | N/A | In Stock | RoHS:EN | QFN | 8# | Tube | 1 | 0.7mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6208CRZ-T | Obsolete | N/A | In Stock | RoHS:EN | QFN | 8# | Reel | 1 | 0.7mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6208IBZ | Obsolete | N/A | In Stock | RoHS:EN | SOIC | 8# | Tube | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL6208IBZ-T | Obsolete | N/A | Out of Stock | RoHS:EN | SOIC | 8# | Reel | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL6208IRZ | Obsolete | N/A | In Stock | RoHS:EN | QFN | 8# | Tube | 2 | 0.7mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL6208IRZ-T | Obsolete | N/A | In Stock | RoHS:EN | QFN | 8# | Reel | 2 | 0.7mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
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- Product Change NoticePDF 156 KB Jan 17, 2024
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- Product AdvisoryPDF 106 KB PA16061 Jun 08, 2016
- Product Change NoticePDF 294 KB PCN14036 Jul 08, 2014
- Product Change NoticePDF 207 KB PCN13013 Mar 19, 2013
- Product Change NoticePDF 108 KB PCN12068 Aug 21, 2012
- Product Change NoticePDF 192 KB PCN11123A Jan 30, 2012
- Product Change NoticePDF 248 KB PCN10055 Jun 30, 2010
- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 576 KB an1116 Jan 05, 2004AI-generated Summary: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
Recommended Documents (1)
Datasheets (1)
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- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 576 KB an1116 Jan 05, 2004AI-generated Summary: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
Application Notes & White Papers (3)
- Product Change NoticePDF 156 KB Jan 17, 2024
- Product Change NoticePDF 266 KB Jun 04, 2020
- Product AdvisoryPDF 106 KB PA16061 Jun 08, 2016
- Product Change NoticePDF 294 KB PCN14036 Jul 08, 2014
- Product Change NoticePDF 207 KB PCN13013 Mar 19, 2013View More (10)
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