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Features

  • Electrically screened to DESC SMD # 5962-99560
  • QML qualified per MIL-PRF-38535 requirements
  • Radiation environment
    • High dose rate (50-300rad(Si)/s): 300krad(Si)
    • Latch-up immune
    • Low dose rate (0.01rad(Si)/s): 50krad(Si) (EH products only)
  • IPEAK: >2A (min)
  • Matched rise and fall times (CL = 4300pF): 75ns (maximum)
  • Low voltage lockout feature
    • HS-4424RH, HS-4424EH: <10.0V
    • HS-4424BRH, HS-4424BEH: <7.5V
  • Wide supply voltage range: 12V to 18V
  • Prop delay: 250ns (maximum)
  • Consistent delay times with VCC changes
  • Low power consumption
    • 40mW with inputs high
    • 20mW with inputs low
  • Low equivalent input capacitance: 3.2pF (typical)
  • ESD protected: >4000V

Description

The radiation hardened HS-4424RH, HS-4424EH, HS-4424BRH and HS-4424BEH are non-inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current outputs at voltages up to 18V. The inputs of these devices are TTL compatible and can be directly driven by our HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power MOSFETs in high-frequency applications. The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance. The output stage incorporates a low voltage lockout circuit that puts the outputs into a three-state mode when the supply voltage drops below 10V for the HS-4424RH, HS-4424EH and 7.5V for the HS-4424BRH, HS-4424BEH. Constructed with the dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. Detailed Electrical Specifications for these devices are contained in SMD 5962-99560.

Parameters

AttributesValue
RatingSpace
Driver TypeLow Side
Input VCC (Min) (V)12
Input VCC (Max) (V)18
Low Side Rise Time (max) (ns)75
Low Side Fall Time (max) (ns)75
Drivers (#)2
Output TypeNon-inverting
Peak Output Source Current (A)2
Peak Output Sink Current (A)2
Temp. Range (°C)-55 to +125°C
TID HDR (krad(Si))300
DSEE (MeV·cm2/mg)60
FlowRH Hermetic
Qualification LevelClass Q, Class V, EM, QML Class T (Space Lower Level)
Die Sale Availability?Yes
PROTO Availability?Yes

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
CFP7 x 10 x 2.92161.27
CFP10.4 x 6.9 x 0.00161.3
DIE

Applications

  • Switching power supplies
  • DC/DC converters
  • Motor controllers
Part NumberStatusSamplesStockRoHSPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Qualification LevelPkg. Dimensions (mm)DLA SMDPb (Lead) FreePb Free CategoryMOQTemp. Range (°C)CAGE code
HS0-4424RH-QActiveN/AOut of StockRoHS:EN
RoHS:JA
DIEClass V5962F9956001V9ANo100-55 to +125°C34371
HS0-4424RH/SAMPLEActiveN/AOut of StockContactDIEEMNo5-55 to +125°C34371
HS9-4424BRH-TActiveN/AOut of StockContactCFP16#QML Class T (Space Lower Level)7 x 10 x 2.925962R9956002TXCYes450-55 to +125°C34371
HS9-4424RH-8ActiveN/AOut of StockContactCFP16#TrayNot ApplicableClass Q10.4 x 6.9 x 0.005962F9956001QXCExemptGold Plate over compliant Undercoat-e425-55 to +125°C34371
HS9-4424RH-QActiveN/AIn StockContactCFP16#TrayNot ApplicableClass V10.4 x 6.9 x 0.005962F9956001VXCExemptGold Plate over compliant Undercoat-e425-55 to +125°C34371
HS9-4424RH/PROTOActiveAvailableIn StockContactCFP16#TrayNot ApplicableEM10.4 x 6.9 x 0.00ExemptGold Plate over compliant Undercoat-e41-55 to +125°C34371

Knowledge Base

  1. Can the output of the HS-4423RH or HS-4424RH be cross-strapped?

    Question:Can the output of these parts be wired ORed or ANDed together, i.e., cross-strapped directly without diode isolation? Answer:The output will tri-state without bias or a path to bias so yes, they can be cross-strapped directly without diode isolation.

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