Features
- Electrically screened to DLA SMD # 5962-99511
- QML qualified per MIL-PRF-38535 requirements
- EH version acceptance tested to 50krad(Si) (LDR)
- Radiation environment
- High dose rate (50-300rad(Si)/s): 300krad(Si)
- Latch-up immune
- Low dose rate immune
- IPEAK: >2A (typ)
- Matched rise and fall times (CL = 4300pF):75ns (max)
- Low voltage lock-out feature
- HS-4423RH, HS-4423EH: <10.0V
- HS-4423BRH, HS-4423BEH: <7.5V
- Wide supply voltage range: 12V to 18V
- Prop delay: 250ns (max)
- Consistent delay times with VCC changes
- Low power consumption
- 40mW with inputs high
- 20mW with inputs low
- Low equivalent input capacitance: 3.2pF (typ)
- ESD protected: 4000V
Description
The Radiation Hardened HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current outputs at voltages up to 18V. The inputs of these devices are TTL compatible and can be directly driven by our HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power MOSFETs in high-frequency applications. The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance. The output stage incorporates a low voltage lock-out circuit that puts the outputs into a three-state mode when the supply voltage drops below 10V for the HS-4423RH, HS-4423EH and 7.5V for the HS-4423BRH and HS-4423BEH. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to Single Event Latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments.
Parameters
| Attributes | Value |
|---|---|
| Rating | Space |
| Driver Type | Low Side |
| Input VCC (Min) (V) | 12 |
| Input VCC (Max) (V) | 18 |
| Low Side Rise Time (max) (ns) | 95 |
| Low Side Fall Time (max) (ns) | 95 |
| Drivers (#) | 2 |
| Output Type | Inverting |
| Peak Output Source Current (A) | 2 |
| Peak Output Sink Current (A) | 2 |
| Temp. Range (°C) | -55 to +125°C |
| TID HDR (krad(Si)) | 300 |
| DSEE (MeV·cm2/mg) | 60 |
| Flow | RH Hermetic |
| Qualification Level | Class Q, Class V, EM |
| Die Sale Availability? | No |
| PROTO Availability? | Yes |
Applications
- Switching power supplies
- DC/DC converters
- Motor controllers
Knowledge Base
-
Can the output of the HS-4423RH or HS-4424RH be cross-strapped?
Question:Can the output of these parts be wired ORed or ANDed together, i.e., cross-strapped directly without diode isolation? Answer:The output will tri-state without bias or a path to bias so yes, they can be cross-strapped directly without diode isolation.
-
HS-4423 Model
... plans to make one for these legacy parts. For new designs you may want to switch to GaN transistors and one of our GaN FET drivers (ISL70040SEH, ISL73040SEH or ISL71040M). We have models available today for these GaN FET drivers. Suitable Products HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH
Apr 15, 2026
Support Communities
