Features
- RoHS/Pb-free Available for SBDIP Package (100% Gold Termination Finish)
- TTL and CMOS Compatible Inputs
- Adjustable Rise and Fall Times via Two External Capacitors
- Programmable Output Differential Voltage via VREF Input
- Operates at Data Rates Up to 100k Bits/s
- Output Short Circuit Proof and Contains Overvoltage Protection
- Outputs are Inhibited (0V) If DATA (A) and DATA (B) Inputs are Both in the "Logic One" State
- DATA (A) and DATA (B) Signals are "AND'd" with Clock and Sync Signals
- Full Military Temperature Range
Description
The HS-3182 is a monolithic dielectrically isolated bipolar differential line driver designed to meet the specifications of ARINC 429. This Device is intended to be used with a companion chip, HS-3282 CMOS ARINC Bus Interface Circuit, which provides the data formatting and processor interface function. All logic inputs are TTL and CMOS compatible. In addition to the DATA (A) and DATA (B) inputs, there are also inputs for CLOCK and SYNC signals which are AND'd with the DATA inputs. This feature enhances system performance and allows the HS-3182 to be used with devices other than the HS-3182. Three power supplies are necessary to operate the HS-3182: +V = +15V ±10%, -V = -15V ±10%, and V1 = 5V ±5%. VREF is used to program the differential output voltage swing such that VOUT (DIFF) = ±2VREF. Typically, VREF = V1 = 5V ±5%, but a separate power supply may be used for VREF which should not exceed 6V. The driver output impedance is 75Ω ±20% at +25°C. Driver output rise and fall times are independently programmed through the use of two external capacitors connected to the CA and CB inputs. Typical capacitor values are CA = CB = 75pF for high-speed operation (100kBPS), and CA = CB = 300pF for low-speed operation (12kBPS to 14. 5kBPS). The outputs are protected against overvoltage and short circuit as shown in the Block Diagram. The HS-3182 is designed to operate over an ambient temperature range of -55°C to +125°C, or -40°C to +85°C.
Parameters
| Attributes | Value |
|---|---|
| Rating | Harsh Environment |
| Data Frame Length | N/A |
| Temp. Range (°C) | -40 to +85°C, -55 to +125°C |
| Flow | Harsh Environment & MIL-STD-883 |
| Qualification Level | QML Class Q (military) |
| Die Sale Availability? | No |
| PROTO Availability? | No |
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 5962-8687901EA | Active | Available | Out of Stock | SBDIP | 16# | Tube | Not Applicable | 2.5mm | 20.3 x 7.5 x 2.41 | No | Hot Solder Dip | 115 | -55 to +125°C |
| HS1-3182-8 | Active | Available | In Stock | SBDIP | 16# | Tube | Not Applicable | 2.5mm | 20.3 x 7.5 x 2.41 | Yes | Gold Plate-e4 | 161 | -55 to +125°C |
| HS1-3182-9+ | Active | Available | Out of Stock | SBDIP | 16# | Tube | Not Applicable | 2.5mm | 20.3 x 7.5 x 2.41 | Yes | Gold Plate-e4 | 138 | -40 to +85°C |
| HS4-3182-8 | Active | Available | In Stock | CLCC | 28# | Tube | Not Applicable | 1.3mm | 11.4 x 11.4 x 0.00 | No | Hot Solder Dip | 129 | -55 to +125°C |
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- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
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- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
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