Features
- Electrically Screened to SMD # 5962-95669
- QML Qualified per MIL-PRF-38535 Requirements
- Maximum Acquisition Time
- 10V Step to 0.1%: 4μs
- 10V Step to 0.01%: 6μs
- Maximum Drift Current: 10nA (Maximum Over Temperature)
- TTL Compatible Control Input
- Power Supply Rejection: ≥ 80dB
- Total Dose: 100 krad(Si) (Max)
- No Latch-Up
Description
Support is limited to customers who have already adopted these products.
The HS-2420RH is a radiation hardened monolithic circuit consisting of a high performance operational amplifier with its output in series with an ultra-low leakage analog switch and MOSFET input unity gain amplifier. With an external hold capacitor connected to the switch output, a versatile, high performance sample-and-hold or track-and-hold circuit is formed. When the switch is closed, the device behaves as an operation amplifier, and any of the standard op amp feedback networks may be connected around the device to control gain, frequency response, etc. When the switch is opened the output will remain at its last level. Performance as a sample-and-hold compares very favorably with other monolithic, hybrid, modular, and discrete circuits. Accuracy to better than 0. 01% is achievable over the temperature range. Fast acquisition is coupled with superior droop characteristics, even at high temperatures. High slew rate, wide bandwidth, and low acquisition time produce excellent dynamic characteristics. The ability to operate at gains greater than 1 frequently eliminates the need for external scaling amplifiers. The device may also be used as a versatile operational amplifier with a gated output for applications such as analog switches, peak holding circuits, etc. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95669.
Applications
- Data Acquisition Systems
- D to A Deglitcher
- Auto Zero Systems
- Peak Detector
- Gated Op Amp
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | DLA SMD | Pb (Lead) Free | MOQ | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|
| HS1B-2420RH-Q | Obsolete | N/A | Out of Stock | SBDIP | 14# | Tube | 5962-95669 | No | 15 | -55 to +125°C |
Filters
Applied Filters
- End Of Life NoticePDF 179 KB PLC14003 Feb 11, 2014
- Product AdvisoryPDF 83 KB PA14004 Jan 30, 2014
- Application NotePDF 338 KB an9867 Nov 10, 1999AI-generated Summary: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
Recommended Documents (1)
Datasheets (1)
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- Application NotePDF 338 KB an9867 Nov 10, 1999AI-generated Summary: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
Application Notes & White Papers (2)
- End Of Life NoticePDF 179 KB PLC14003 Feb 11, 2014
- Product AdvisoryPDF 83 KB PA14004 Jan 30, 2014
Product Notices (PCN, EOL, etc) (2)
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