Features
- This Circuit is Processed in Accordance to MIL-STD- 883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
- Low Power Standby and Operating Power
- ICCSB 100µA
- ICCOP 20mA at 1MHz
- Fast Access Time 90/120ns
- Industry Standard Pinout
- Single 5.0V Supply
- CMOS/TTL Compatible Inputs
- High Output Drive 12 LSTTL Loads
- Synchronous Operation
- On-Chip Address Latches
- Separate Output Enable
- Operating Temperature Range -55°C to +125°C
Description
The HM-6617/883 is a 16, 384-bit fuse link CMOS PROM in a 2K word by 8-bit/word format with "Three-State" outputs. This PROM is available in the standard 0. 600 inch wide 24 pin SBDIP, the 0. 300 inch wide slim SBDIP, and the JEDEC standard 32 pad CLCC. The HM-6617/883 utilizes a synchronous design technique. This includes on-chip address latches and a separate output enable control which makes this device ideal for applications utilizing recent generation microprocessors. This design technique, combined with the Renesas advanced self-aligned silicon gate CMOS process technology offers ultra-low standby current. Low ICCSB is ideal for battery applications or other systems with low power requirements. The Renesas NiCr fuse link technology is utilized on this and other Renesas CMOS PROMs. This gives the user a PROM with permanent, stable storage characteristics over the full industrial and military temperature voltage ranges. NiCr fuse technology combined with the low power characteristics of CMOS provides an excellent alternative to standard bipolar PROMs or NMOS EPROMs. All bits are manufactured storing a logical "0" and can be selectively programmed for a logical "1" at any bit location.
Parameters
| Attributes | Value |
|---|---|
| Rating | MIL-STD-883 |
| Temp. Range (°C) | -55 to +125°C |
| Flow | Harsh Environment & MIL-STD-883 |
| Qualification Level | Class Q |
| Die Sale Availability? | No |
| PROTO Availability? | No |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) | Pitch (mm) |
|---|---|---|---|
| SBDIP | 30.5 x 15.1 x 2.41 | 24 | 2.5 |
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) | CAGE code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HM1-6617/883 | Active | Available | In Stock | SBDIP | 24# | Tube | Not Applicable | No | Hot Solder Dip | 45 | -55 to +125°C | 34371 |
Filters
Applied Filters
- Product Change NoticePDF 260 KB PCN16087 Sep 30, 2016
- Product Change NoticePDF 174 KB PCN14017 Apr 21, 2014
- Product Change NoticePDF 138 KB PCN11042 Apr 07, 2011
- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
Recommended Documents (1)
Datasheets (1)
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- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
Application Notes & White Papers (1)
- Product Change NoticePDF 260 KB PCN16087 Sep 30, 2016
- Product Change NoticePDF 174 KB PCN14017 Apr 21, 2014
- Product Change NoticePDF 138 KB PCN11042 Apr 07, 2011
Product Notices (PCN, EOL, etc) (4)
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