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Features

  • 3 Micron Radiation Hardened CMOS SOS
  • Total Dose 200K RAD (Si)
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit- Day (Typ)
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s
  • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
  • Latch-Up Free Under Any Conditions
  • Fanout (Over Temperature Range)
  • Bus Driver O11utputs - 15 LSTTL Loads
  • Military Temperature Range: -55°C to +125°C
  • Significant Power Reduction Compared to LSTTL ICs
  • DC Operating Voltage Range: 4.5V to 5.5V
  • LSTTL Input Compatibility
  • VIL = 0.8V Max
  • VIH = VCC/2 Min
  • Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

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The Intersil HCTS574MS is a Radiation Hardened non-inverting octal D-type, positive edge triggered flip-flop with three-stateable outputs. The HCTS574MS utilizes advanced CMOS/SOS technology. The eight flip-flops enter data into their registers on the LOW-to-HIGH transition of the clock (CP). Data is also transferred to the outputs during this transition. The output enable (OE) controls the three-state outputs and is independent of the register operation. When the output enable is high, the outputs are in the high impedance state. The HCTS574MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS574MS is supplied in a 20 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).

Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pitch (mm)Pkg. Dimensions (mm)DLA SMDPb (Lead) FreePb Free CategoryMOQTemp. Range (°C)
HCTS574DMSRObsoleteN/AOut of StockSBDIP20#TubeNot Applicable2.5mm25.4 x 7.5 x 2.415962-95758ExemptGold Plate over compliant Undercoat-e425-55 to +125°C
HCTS574KMSRObsoleteN/AOut of StockCFP20#TrayNot Applicable1.3mm12.7 x 7.5 x 0.005962-95758ExemptGold Plate over compliant Undercoat-e425-55 to +125°C
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